| PART |
Description |
Maker |
| HYS72V128321GR-7-D HYS72V128321GR-7.5-D HYS72V1283 |
1GB PC133 (2-2-2) 2-bank available 2Q02
512MB PC133 (3-3-3) 1-bank
POT 100 OHM 3/8 SQ CERM SL ST
2GB PC133 (3-3-3) 2-bank available 4Q02
256MB PC133 (3-3-3) 1-bank End-of-Life
512MB PC100 (2-2-2) 1-bank End-of-Life
1GB PC133 (3-3-3) 2-bank End-of-Life
2GB PC133 (2-2-2) 2-bank available 4Q02
PC133 Registered SDRAM-Modules PC133的SDRAM的注册模
1GB PC133 (3-3-3) 1-bank available tbd GB的PC133的（3-3-3银行提供待定
16M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
|
Infineon Technologies AG
Infineon Technologies A...
|
| K522H1HACF-B050 |
2Gb (128M x16) NAND Flash 1Gb (64M x16 ) Mobile DDR SDRAM
|
Samsung semiconductor
|
| HYS72D128521GR-7-B HYS72D64500GR-8-B HYS72D128520G |
DDR SDRAM Modules - 512MB (64Mx72) PC2100 1-bank
DDR SDRAM Modules - 1GB (128Mx72) PC2100 1-bank
DDR SDRAM Modules - 256MB (32Mx72) PC2100 1-bank
256 MB 32M x 72 PC2100 Registered DIM...
DDR SDRAM Modules - 1GB (128Mx72) PC2100 2-2-2 2-bank
Registered DDR SDRAM-Modules
Low Profile Registered DDR-I SDRAM-Modules
|
INFINEON[Infineon Technologies AG]
|
| HYS64T64000GU-3.7-A HYS64T64000GU-5-A HYS64T128020 |
DDR2 SDRAM Modules - 512MB (64Mx64) PC2 4300 4-4-4 1Bank; available 2Q/04
DDR2 SDRAM Modules - 512MB (64Mx64) PC2 3200 3-3-3 1Bank; available 2Q/04
DDR2 SDRAM Modules - 1GB (128Mx64) PC2 4300 4-4-4 2Bank; available 2Q/04
DDR2 SDRAM Modules - 256MB (32Mx64) PC2 4300 4-4-4 1Bank; available 2Q/04
DDR2 SDRAM Modules - 1GB (128Mx72) PC2 4300 4-4-4; 2Bank; available 2Q/04
DDR2 SDRAM Modules - 512MB (64Mx72) PC2 4300 4-4-4 1Bank; available 2Q/04
DDR2 SDRAM Modules - 256MB (32Mx64) PC2 3200 3-3-3 1Bank; available 2Q/04
DDR2 SDRAM Modules - 1GB (128Mx64) PC2 3200 3-3-3 2Bank; available 2Q/04
DDR2 SDRAM Modules - 512MB (64Mx72) PC2 3200 3-3-3 1Bank; available 2Q/04
DDR2 SDRAM Modules - 1GB (128Mx72) PC2 3200 3-3-3 2Bank; available 2Q/04
|
Infineon
|
| MB84VP24491HK-70PBS MB84VP24491HK |
128M (X16) FLASH MEMORY 32M (X16) Mobile FCRAMTM 128M的（x16）的快闪记忆2M的（x16）的移动FCRAMTM
|
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
|
| HYB18T256161BF-20 HYB18T256161BF-25 HYB18T256161BF |
256-Mbit x16 DDR2 SDRAM
|
Qimonda AG
|
| HM62V16256CLBP-5 |
4 M SRAM (256-kword x16-bit) 四米的SRAM56 - KWord的x16位）
|
Renesas Electronics, Corp.
|
| IS43DR86400 IS46DR16320 IS43DR16320 |
512Mb (x8, x16) DDR2 SDRAM
Clock frequency up to 400MHz
|
Integrated Silicon Solution, Inc
Integrated Silicon Solu...
|
| MT46V64M8 MT46V64M8P-5BF MT46V32M16 MT46V32M16P-6T |
Double Data Rate (DDR) SDRAM
512Mb: x4, x8, x16 Double Data Rate (DDR) SDRAM SDRAM Features
512Mb: x4, x8, x16 Double Data Rate SDRAM Features
|
Alliance Semiconductor ...
Micron Technology
|
| M30L0R8000B0 |
256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
|
ST
|
| W3EG7264S-AD4 |
512MB - 2x32Mx72 DDR ECC SDRAM UNBUFFERED w/PLL 512MB 2x32Mx72的DDR ECC的内存缓冲瓦锁相
|
Optrex America, Inc.
|
